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Computer Simulations for Processing Plasmas
Author(s) -
Bogaerts Annemie,
De Bleecker Kathleen,
Georgieva Violeta,
Kolev Ivan,
Madani Myriam,
Neyts Erik
Publication year - 2006
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200500065
Subject(s) - plasma , cavity magnetron , computational physics , materials science , electron , plasma processing , atomic physics , plasma parameters , particle in cell , dielectric barrier discharge , monte carlo method , physics , nanotechnology , thin film , sputtering , nuclear physics , statistics , mathematics
Summary: In this paper, some of our modeling efforts for processing plasmas are presented. We make use of fluid models or particle‐in‐cell–Monte Carlo (PIC‐MC) simulations for the plasma behavior, depending on the application. Fluid models are most suitable to describe the detailed plasma chemistry, like the formation and growth of nanoparticles in so‐called dusty plasmas, and for dielectric barrier discharges (DBDs) at atmospheric pressure. PIC‐MC simulations are the best choice to describe magnetron discharges, operating at low pressure, and for dealing with the plasma dynamics in single‐ and dual‐frequency rf discharges. Finally, we also apply molecular dynamics (MD) simulations for plasma‐surface interaction, more specifically for the plasma deposition of diamond‐like carbon (DLC) films.Calculated potential distribution and electron density profile in the magnetron discharge.