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Open Air Deposition of SiO 2 Films by an Atmospheric Pressure Line‐Shaped Plasma
Author(s) -
Zhu Xiaodong,
ArefiKhonsari Farzaneh,
PetitEtienne Camille,
Tatoulian Michael
Publication year - 2005
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200400049
Subject(s) - oxygen , atmospheric pressure , deposition (geology) , materials science , analytical chemistry (journal) , ellipsometry , x ray photoelectron spectroscopy , thin film , atmospheric pressure plasma , chemical engineering , chemistry , plasma , nanotechnology , environmental chemistry , organic chemistry , paleontology , physics , quantum mechanics , sediment , engineering , biology , oceanography , geology
Summary: A line‐shaped atmospheric pressure filamentary plasma is developed to carry out the open air deposition of silicon oxide films from N 2 /hexamethyldisoxane (HMDSO) mixtures with/without adding oxygen. FT‐IR, XPS, SEM, and ellipsometry were used to analyse the samples. It is found that the deposited films present mainly inorganic characteristics even without an oxygen admixture in the open air system. Smooth, continuous, and uniform films can be formed at relatively low monomer content. By increasing the monomer content for a fixed power density or oxygen in the input gases, the deposition rates increase and then show a plateau, suggesting that there exists saturation values for the deposition rates corresponding to the monomer and oxygen content. By the comparison of films deposited in the open air device and in a controlled nitrogen atmosphere in the same device, the important role of the oxygen in the open air reactor has been shown. This study exhibits a potential of open air deposition at atmospheric pressure to form SiO 2 films for large‐scale deposition.An FT‐IR spectrum of an SiO x film deposited in open air without adding any oxygen to the discharge.