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Dry Etching of Electronic Oxides, Polymers, and Semiconductors
Author(s) -
Pearton Stephen J.,
Norton David P.
Publication year - 2005
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200400035
Subject(s) - materials science , etching (microfabrication) , plasma etching , polymer , semiconductor , reactive ion etching , dry etching , scanning electron microscope , plasma , micrograph , chemical engineering , analytical chemistry (journal) , nanotechnology , optoelectronics , composite material , chemistry , chromatography , physics , layer (electronics) , engineering , quantum mechanics
Summary: A review is given of commonly used plasma etching techniques and typical plasma chemistries for patterning electronic oxides, such as SiO 2 , HfO 2 , MgO, Sc 2 O 3 , and ZnO, polymers, and several important semiconductors (Si, GaAs, and InP). Issues that affect the reproducibility and manufacturability of etching processes, such as loading effects, endpoint detection, and etch selectivity, are also discussed. Finally, disruption to the etched surface in the form of polymer deposition, plasma residues, ion‐induced displacement damage, or preferential loss of one of the lattice elements during the etch process are covered.SEM micrograph of features etched into a ZnMgO/ZnO structure using a BCl 3 /Cl 2 /Ar ICP plasma.