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Continuous and Modulated Deposition of Fluorocarbon Films from c‐C 4 F 8 Plasmas
Author(s) -
Milella Antonella,
Palumbo Fabio,
Favia Pietro,
Cicala Grazia,
d'Agostino Riccardo
Publication year - 2004
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200400021
Subject(s) - fluorocarbon , duty cycle , plasma , deposition (geology) , analytical chemistry (journal) , thin film , torr , phase (matter) , gas phase , materials science , work function , chemistry , nanotechnology , chromatography , physics , composite material , thermodynamics , organic chemistry , paleontology , power (physics) , quantum mechanics , sediment , layer (electronics) , biology
Summary: Continuous and modulated c‐C 4 F 8 (perfluorocyclobutane) plasmas were used to deposit thin Teflon‐like films. Gas phase and film composition and structure were investigated and the results can be rationalized with the deposition mechanism developed in a previous work for C 2 F 4 ‐modulated plasmas. The effect of modulation on the morphology and the chemistry of the surface were studied.CF x percentages as a function of the duty cycle for films deposited for 90 min from modulated discharges sustained at 100 W, 300 mtorr, and 6 sccm.