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Mechanisms of wafer sawing and impact on wafer properties
Author(s) -
Bidiville A.,
Wasmer K.,
Michler J.,
Nasch P. M.,
Van der Meer M.,
Ballif C.
Publication year - 2010
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.972
Subject(s) - wafer , ingot , materials science , groove (engineering) , surface finish , surface roughness , silicon , wafer dicing , engineering drawing , mechanical engineering , composite material , optoelectronics , metallurgy , engineering , alloy
Silicon wafer wire‐sawing experiments were realized with different sets of sawing parameters, and the thickness, roughness, and cracks depth of the wafers were measured. The results are discussed in relation to assumptions underlying the rolling–indenting model, which describes the process. It was also found that the silicon surface at the bottom of the sawing groove is different from the wafer surface, implying different sawing conditions in the two positions. Furthermore, the measured parameters were found to vary along the wire direction, between the entrance of the wire in the ingot and its exit. Based on these observations, some improvements for the wire‐sawing model are discussed. Copyright © 2010 John Wiley & Sons, Ltd.