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Four‐junction solar cells using lattice‐matched II–VI and III–V semiconductors
Author(s) -
Wu S.N.,
Ding D.,
Johnson S. R.,
Yu S.Q.,
Zhang Y.H.
Publication year - 2010
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.962
Subject(s) - suns in alchemy , semiconductor , energy conversion efficiency , lattice (music) , optoelectronics , materials science , p–n junction , solar energy , thermal , physics , electrical engineering , thermodynamics , engineering , acoustics
Four‐junction solar cells are designed using lattice‐matched II–VI (ZnCdSeTe) and III–V (AlGaAsSb) semiconductors grown on GaSb substrates. These materials have a zinc blende crystal structure, similar thermal expansion coefficients, and bandgaps that cover the entire solar spectrum. Numerical simulations of the energy conversion efficiencies of various designs for both the AM0 and AM1.5D spectra are performed using published material parameters. These results indicate that the achievable 1 sun AM0 efficiency is 43% for an optimal design and 40% for a more practical design; for comparison the ideal limit provided by Henry's model is 49%. While for the AM1.5D spectrum an optimal design can reach 46% under 1 sun and 55% under 1000 suns while a more practical design can reach 44 and 54%, respectively; for comparison Henry's model gives 51 and 62%, respectively. Copyright © 2010 John Wiley & Sons, Ltd.