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Non‐vacuum methods for formation of Cu(In, Ga)(Se, S) 2 thin film photovoltaic absorbers
Author(s) -
Hibberd C. J.,
Chassaing E.,
Liu W.,
Mitzi D. B.,
Lincot D.,
Tiwari A. N.
Publication year - 2010
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.914
Subject(s) - copper indium gallium selenide solar cells , thin film , vacuum deposition , materials science , diselenide , indium , photovoltaic system , photovoltaics , optoelectronics , vacuum evaporation , energy conversion efficiency , engineering physics , gallium , solar cell , commercialization , nanotechnology , metallurgy , electrical engineering , selenium , engineering , business , marketing
Polycrystalline thin films of copper indium diselenide and its alloys with gallium and sulphur (CIGS) have proven to be suitable for use as absorbers in high‐efficiency solar cells. Record efficiency devices of 20% power conversion efficiency have been produced by co‐evaporation of the elements under high vacuum. However, non‐vacuum methods for absorber deposition promise significantly lower capital expenditure and reduced materials costs, and have been used to produce devices with efficiencies of up to 14%. Such efficiencies are already high enough for commercial up‐scaling to be considered and several companies are now trying to develop products based on non‐vacuum deposited CIGS absorbers. This article will review the wide range of non‐vacuum techniques that have been used to deposit CIGS thin films, highlighting the state of the art and efforts towards commercialization. Copyright © 2009 John Wiley & Sons, Ltd.