Numerical simulation of tunnel diodes for multi‐junction solar cells | Zendy

Hermle M. | Zendy; Létay G. | Zendy; Philipps S. P. | Zendy; Bett A. W. | Zendy

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Numerical simulation of tunnel diodes for multi‐junction solar cells

Author(s) -

Hermle M.,

Létay G.,

Philipps S. P.,

Bett A. W.

Publication year - 2008

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.824

Subject(s) - quantum tunnelling , diode , tunnel diode , tunnel junction , equivalent series resistance , computer simulation , voltage , numerical analysis , optoelectronics , materials science , condensed matter physics , physics , electrical engineering , mechanics , engineering , mathematics , mathematical analysis

This work presents efforts to simulate numerically the current voltage (IV) curve of a III–V based Esaki tunnel diode. Using a tunneling model, which takes into account the full nonlocality of the barrier, a good agreement between measured and simulated IV curves of a GaAs tunnel diode was achieved. The influence of a series resistance effect as well as the importance of trap assisted tunneling (TAT) could be shown. In addition, we present a two‐dimensional model of a III–V multi‐junction solar cell including the numerical model of the investigated Esaki tunnel diode. Copyright © 2008 John Wiley & Sons, Ltd.

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