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Simulation and implementation of a porous silicon reflector for epitaxial silicon solar cells
Author(s) -
Duerinckx Filip,
KuzmaFilipek Izabela,
Van Nieuwenhuysen Kris,
Beaucarne Guy,
Poortmans Jef
Publication year - 2008
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.820
Subject(s) - materials science , reflector (photography) , silicon , distributed bragg reflector , optoelectronics , epitaxy , substrate (aquarium) , layer (electronics) , reflection (computer programming) , optics , porous silicon , computer science , wavelength , nanotechnology , geology , physics , light source , oceanography , programming language
One of the main challenges in the ongoing development of thin film crystalline silicon solar cells on a supporting silicon substrate is the implementation of a long‐wavelength reflector at the interface between the epitaxial layer and the substrate. IMEC has developed such a reflector based on electrochemical anodization of silicon to create a multi‐layer porous silicon stack with alternating high and low porosity layers. This innovation results in a 1–2% absolute increase in efficiency for screenprinted epitaxial cells with a record of 13·8%. To reach a better understanding of the reflector and to aid in its continued optimization, several extensive optical simulations have been performed using an in‐house‐developed optical software programme. This software is written as a Microsoft Excel workbook to make use of its user‐friendliness and modular structure. It can handle up to 15 individual dielectric layers and is used to determine the influence of the number and the sequence of the layers on the internal reflection. A sensitivity analysis is also presented. A study of the angle at which the light strikes the reflector shows separate regions in the physical working of the reflector which include a region where the Bragg effect is dominant as well as a region where total internal reflection plays the largest role. The existence of these regions is proved using reflection measurements. Based on these findings, an estimate is made for the achievable current gain with an ideal reflector and the potential of epitaxial silicon solar cells is determined. Copyright © 2008 John Wiley & Sons, Ltd.