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Passivating thin bifacial silicon solar cells for industrial production
Author(s) -
Janßen L.,
Rinio M.,
Borchert D.,
Windgassen H.,
Bätzner D. L.,
Kurz H.
Publication year - 2007
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.750
Subject(s) - passivation , silicon nitride , wafer , materials science , silicon , layer (electronics) , optoelectronics , aluminium , crystalline silicon , nitride , locos , composite material
A scheme for passivating thin multi‐crystalline silicon solar cells compatible to mass production is presented. Wafers with a thickness of 180 µm were processed into solar cells. The otherwise severe bowing has been avoided by reduced aluminium coverage on the rear surface. The process scheme includes a silicon nitride firing through step for conventional screen printed contacts, where a silicon nitride layer on the rear surface acts as surface passivation layer and enables a gain in efficiency of 0.6% [abs.]. Copyright © 2007 John Wiley & Sons, Ltd.