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The effect of low pressure chemical vapor deposition of silicon nitride on the electronic interface properties of oxidized silicon wafers
Author(s) -
Jin Hao,
Weber K. J.
Publication year - 2007
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.749
Subject(s) - materials science , silicon nitride , wafer , chemical vapor deposition , deposition (geology) , nitride , silicon , oxide , degradation (telecommunications) , passivation , thin film , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , layer (electronics) , chemistry , electronic engineering , metallurgy , paleontology , sediment , engineering , biology , chromatography
The effect of LPCVD Si 3 N 4 film deposition on oxidized Si wafers, to form Si 3 N 4 /SiO 2 /Si stacks, is studied using capacitance–voltage and carrier lifetime measurements. The deposition of a nitride film leads to an increase in the density of defects at the Si–SiO 2 interface, with the increase being greater the thinner the oxide. However, even the presence of a very thin intermediate oxide results in a dramatic improvement in interface properties compared to the direct deposition of the Si 3 N 4 film on Si. The interface degradation occurs in the initial stages of nitride film deposition and appears to be largely the result of increased interfacial stress. Subsequent thermal treatments do not result in significant further degradation of the Si–SiO 2 interface (except for a loss of hydrogen), again in contrast to the case where the nitride films is deposited onto Si. Copyright © 2007 John Wiley & Sons, Ltd.