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20·5% efficient silicon solar cell with a low temperature rear side process using laser‐fired contacts
Author(s) -
Brendle W.,
Nguyen V. X.,
Grohe A.,
Schneiderlöchner E.,
Rau U.,
Palfinger G.,
Werner J. H.
Publication year - 2006
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.696
Subject(s) - ohmic contact , materials science , passivation , silicon , solar cell , optoelectronics , crystalline silicon , layer (electronics) , laser , silicon solar cell , process (computing) , energy conversion efficiency , optics , composite material , computer science , physics , operating system
Abstract The paper presents a rear side structure for crystalline silicon solar cells, which is processed at a maximum temperature of 220°C. Using two different material compositions for electrical and optical needs, the layer system has excellent passivation properties, enhances light trapping and allows for a good ohmic contact. With this structure we achieve an independently confirmed conversion efficiency η=20·5% on a 250 μm thick silicon solar cell. Due to the fact that the maximum process temperature is 220°C, this layer system enables new solar cell concepts. Copyright © 2006 John Wiley & Sons, Ltd.