20·5% efficient silicon solar cell with a low temperature rear side process using laser‐fired contacts | Zendy

Brendle W. | Zendy; Nguyen V. X. | Zendy; Grohe A. | Zendy; Schneiderlöchner E. | Zendy; Rau U. | Zendy; Palfinger G. | Zendy; Werner J. H. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

20·5% efficient silicon solar cell with a low temperature rear side process using laser‐fired contacts

Author(s) -

Brendle W.,

Nguyen V. X.,

Grohe A.,

Schneiderlöchner E.,

Rau U.,

Palfinger G.,

Werner J. H.

Publication year - 2006

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.696

Subject(s) - ohmic contact , materials science , passivation , silicon , solar cell , optoelectronics , crystalline silicon , layer (electronics) , laser , silicon solar cell , process (computing) , energy conversion efficiency , optics , composite material , computer science , physics , operating system

The paper presents a rear side structure for crystalline silicon solar cells, which is processed at a maximum temperature of 220°C. Using two different material compositions for electrical and optical needs, the layer system has excellent passivation properties, enhances light trapping and allows for a good ohmic contact. With this structure we achieve an independently confirmed conversion efficiency η=20·5% on a 250 μm thick silicon solar cell. Due to the fact that the maximum process temperature is 220°C, this layer system enables new solar cell concepts. Copyright © 2006 John Wiley & Sons, Ltd.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research