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Spray‐ILGAR indium sulfide buffers for Cu(In,Ga)(S,Se) 2 solar cells
Author(s) -
Allsop N. A.,
Schönmann A.,
Muffler H.J.,
Bär M.,
LuxSteiner M. C.,
Fischer Ch.H.
Publication year - 2005
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.655
Subject(s) - indium , chalcopyrite , cadmium sulfide , sulfide , materials science , optoelectronics , copper indium gallium selenide solar cells , buffer (optical fiber) , layer (electronics) , thin film , copper sulfide , quantum efficiency , solar cell , analytical chemistry (journal) , chemistry , copper , nanotechnology , metallurgy , electrical engineering , environmental chemistry , engineering
Thin‐film indium sulfide buffer layers have been prepared using the Spray‐ILGAR technique for use in chalcopyrite solar cells. Buffers deposited on commercially grown Cu(In,Ga)(S,Se) 2 absorbers have produced cells reaching a certified efficiency of 14·7% and average efficiencies matching the reference solar cells prepared with a conventional cadmium sulfide buffer layer. The process parameters have been optimized and the resulting cells have been studied using current–voltage and temperature–illumination‐dependent current–voltage analysis as well as quantum efficiency measurements. Copyright © 2005 John Wiley & Sons, Ltd.