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Obtaining a higher V oc in HIT cells
Author(s) -
Taguchi Mikio,
Terakawa Akira,
Maruyama Eiji,
Tanaka Makoto
Publication year - 2005
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.646
Subject(s) - passivation , fabrication , heterojunction , open circuit voltage , materials science , optoelectronics , deposition (geology) , nanotechnology , solar cell , carrier lifetime , engineering physics , silicon , voltage , electrical engineering , layer (electronics) , engineering , geology , medicine , paleontology , alternative medicine , sediment , pathology
We have achieved a very high conversion efficiency of 21·5% in HIT cells with a size of 100·3 cm 2 . One of the most striking features of the HIT cell is its high open‐circuit voltage V oc , in excess of 710 mV. This is due to the excellent surface passivation at the a‐Si/c‐Si heterointerface realized by Sanyo's successful technologies for fabricating high‐quality a‐Si films and solar cells with low plasma damage processes. We have studied ways to treat the surface to produce a good interface throughout our fabrication processes. We have also investigated the deposition conditions of a‐Si layers for optimizing the barrier height for the minority carriers in the heterojunction. Our approach for obtaining HIT cells with a high V oc is reviewed here. Copyright © 2005 John Wiley & Sons, Ltd.