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MOCVD as a dry deposition method of ZnSe buffers for Cu(In,Ga)(S,Se) 2 solar cells
Author(s) -
Siebentritt Susanne,
Walk Philipp,
Fiedeler Ulrich,
Lauermann Iver,
Rahne Kari,
LuxSteiner Martha Ch.,
Niesen Thomas P.,
Karg Franz
Publication year - 2004
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.539
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , layer (electronics) , buffer (optical fiber) , solar cell , deposition (geology) , chemistry , materials science , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , epitaxy , environmental chemistry , biology , paleontology , sediment , engineering , telecommunications , computer science
ZnSe prepared by metal organic chemical vapor deposition is used as a buffer layer in Cu(In,Ga)(S,Se) 2 solar cells without any utilization of wet chemistry. Cell efficiencies are as good as cells with the conventional CdS buffer. Stability of unencapsulated cells under damp heat conditions is somewhat lower for the alternative buffer. The first stages of photoassisted growth are studied. X‐ray photoemission spectroscopy shows that a continuous layer is formed. Copyright © 2004 John Wiley & Sons, Ltd.