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Elimination of light‐induced degradation with gallium‐doped multicrystalline silicon wafers
Author(s) -
Dhamrin M.,
Hashigami H.,
Saitoh T.
Publication year - 2003
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.482
Subject(s) - wafer , materials science , silicon , doping , gallium , optoelectronics , degradation (telecommunications) , photovoltaics , carrier lifetime , metallurgy , electronic engineering , electrical engineering , photovoltaic system , engineering
Lifetime stability of gallium‐doped multicrystalline silicon wafers has been evaluated under illumination. Quality and stability of the Ga‐doped multicrystalline silicon wafers were intensively studied by means of quasi‐steady‐state photocondcutance lifetime measurement. Results show that as‐grown Ga‐doped multicrystalline silicon wafers have high lifetimes, and no significant degradation was observed under illumination. The Ga‐doped multicrystalline silicon wafers are a promising material for future photovoltaics. Copyright © 2003 John Wiley & Sons, Ltd.