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17.6% efficient tricrystalline silicon solar cells with spatially uniform texture
Author(s) -
Schmiga Christian,
Schmidt Jan,
Metz Axel,
Endrös Arthur,
Hezel Rudolf
Publication year - 2003
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.479
Subject(s) - materials science , silicon , texture (cosmology) , optoelectronics , solar cell , short circuit , current density , aluminium , etching (microfabrication) , isotropic etching , nanotechnology , composite material , electrical engineering , layer (electronics) , voltage , physics , quantum mechanics , artificial intelligence , computer science , image (mathematics) , engineering
Up to now solar cells fabricated on tricrystalline Czochralski‐grown silicon (tri‐Si) have shown relatively low short‐circuit current densities of about 31–33 mA/cm 2 because the three {110}‐oriented grains cannot effectively be textured by commonly used anisotropic etching solutions. In this work, we have optimised a novel chemical texturing step for tri‐Si and integrated it successfully into our solar cell process. Metal/insulator/semiconductor‐contacted phosphorus‐diffused n + p junction silicon solar cells with a silicon‐dioxide‐passivated rear surface and evaporated aluminium contacts were manufactured, featuring a spatially uniform surface texture over all three grains on both cell sides. Despite the simple processing sequence and cell structure, an independently confirmed record efficiency of 17.6% has been achieved. This excellent efficiency is mainly due to an increased short‐circuit current density of 37 mA/cm 2 obtained by substantially reduced reflection and enhanced light trapping. Copyright © 2003 John Wiley & Sons, Ltd.