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Accelerated publication 17.1% efficient Cu(In,Ga)Se 2 ‐based thin‐film solar cell
Author(s) -
Tuttle J. R.,
Contreras M. A.,
Gillespie T. J.,
Ramanathan K. R.,
Tennant A. L.,
Keane J.,
Gabor A. M.,
Noufi R.
Publication year - 1995
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670030404
Subject(s) - solar cell , open circuit voltage , materials science , thin film , photovoltaic system , optoelectronics , band gap , thin film solar cell , crystallite , short circuit , voltage , deposition (geology) , engineering physics , nanotechnology , electrical engineering , metallurgy , engineering , geology , paleontology , sediment
We report a world‐record, total‐area efficiency of 17.1% for a polycrystalline thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic solar cell. the incorporation of Ga to raise the absorber bandgap has been accomplished successfully and in such a manner that an open‐circuit voltage of 654 mV and a fill factor of greater than 77% have been achieved. We describe briefly the deposition process, the device structure, and the device performance characteristics.