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Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF 2 /ZnO/CdS/Cu(In,Ga)Se 2 /Mo solar cell
Author(s) -
Contreras Miguel A.,
Gabor Andrew M.,
Tennant Andrew L.,
Asher Sally,
Tuttle John,
Noufi Rommel
Publication year - 1994
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670020404
Subject(s) - crystallite , solar cell , materials science , thin film , optoelectronics , capacitance , energy conversion efficiency , doping , open circuit voltage , copper indium gallium selenide solar cells , analytical chemistry (journal) , voltage , electrode , electrical engineering , nanotechnology , chemistry , metallurgy , chromatography , engineering
This communication reports an MgF 2 /ZnO/CdS/Cu(In,Ga)Se 2 /Mo/glass polycrystalline solar cell with a confirmed total‐area conversion efficiency of 16.4%. the thin‐film Cu(In,Ga)Se 2 absorber was fabricated by computer‐controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance‐voltage (C‐V) measurements also reveal a graded doping profile in the region near the electronic p‐n junction. the enhanced device performance is characterized by an open‐circuit voltage (V oc ) of 660 mV and a particularly high fill factor (FF) of 78.7%.