Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF 2 /ZnO/CdS/Cu(In,Ga)Se 2 /Mo solar cell | Zendy

Contreras Miguel A. | Zendy; Gabor Andrew M. | Zendy; Tennant Andrew L. | Zendy; Asher Sally | Zendy; Tuttle John | Zendy; Noufi Rommel | Zendy

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Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF 2 /ZnO/CdS/Cu(In,Ga)Se 2 /Mo solar cell

Author(s) -

Contreras Miguel A.,

Gabor Andrew M.,

Tennant Andrew L.,

Asher Sally,

Tuttle John,

Noufi Rommel

Publication year - 1994

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.4670020404

Subject(s) - crystallite , solar cell , materials science , thin film , optoelectronics , capacitance , energy conversion efficiency , doping , open circuit voltage , copper indium gallium selenide solar cells , analytical chemistry (journal) , voltage , electrode , electrical engineering , nanotechnology , chemistry , metallurgy , chromatography , engineering

This communication reports an MgF 2 /ZnO/CdS/Cu(In,Ga)Se 2 /Mo/glass polycrystalline solar cell with a confirmed total‐area conversion efficiency of 16.4%. the thin‐film Cu(In,Ga)Se 2 absorber was fabricated by computer‐controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance‐voltage (C‐V) measurements also reveal a graded doping profile in the region near the electronic p‐n junction. the enhanced device performance is characterized by an open‐circuit voltage (V oc ) of 660 mV and a particularly high fill factor (FF) of 78.7%.

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