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Reduced temperature coefficients for recent high‐performance silicon solar cells
Author(s) -
Zhao J.,
Wang A.,
Robinson S. J.,
Green M. A.
Publication year - 1994
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670020305
Subject(s) - passivation , common emitter , materials science , open circuit voltage , perl , optoelectronics , solar cell , silicon , voltage , nanotechnology , electrical engineering , computer science , engineering , layer (electronics) , world wide web
The PERC cell (passivated emitter and rear cell) and PERL (passivated emitter and rear locally‐diffiused) cell have recently demonstrated improved cell performance owing to the high quality of surface passivation and high bulk carrier lifetimes. the effect of temperature on the performance of these cells is reported. As anticipated, owing to higher open‐circuit voltages these cells should have a lower temperature sensitivity of performance. the PERL cells demonstrated a normalized efficiency temperature variation of −2632 ppm °C −−1 , which is the lowest ever reported for a silicon cell. However, PERC cells with a similarly high open‐circuit voltage showed a higher temperature sensitivity owing to the bulk resistance component, which limits the performance of PERC cells.