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Characteristics of a‐Si solar cells prepared by the super chamber at a high substrate temperature
Author(s) -
Nishikuni Masato,
Takahama Tsuyoshi,
Okamoto Shingo,
Ninomiya Kunimoto,
Nishiwaki Hidenori,
Tsuda Shinya,
Takeoka Akio,
Ohnishi Michotoshi,
Nakano Shoichi,
Kuwano Yukinori
Publication year - 1994
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670020304
Subject(s) - materials science , substrate (aquarium) , solar cell , layer (electronics) , indium tin oxide , indium , analytical chemistry (journal) , absorption (acoustics) , deposition (geology) , metal , temperature coefficient , oxide , optoelectronics , composite material , chemistry , metallurgy , paleontology , oceanography , chromatography , sediment , biology , geology
A new approach to high‐performance a‐Si solar cells was studied. a‐Si films prepared at a high substrate temperature (> 250°C) have a higher absorption coefficient and a low SiH 2 bond density. the effect of deposition temperature on the open‐circuit voltage (V oc ) has been investigated systematically for glass/SnO2 Ipin/metal and glass/metal/nip/indium tin oxide (ITO) structure a‐Si solar cells. The V oc is found to depend strongly on the thermal history of the p/i interface. A short‐circuit current of 19.5 mA/cm −−2 was achieved for an a‐Si solar cell using an a‐Si i‐layer with a thickness of 4000 Å, which was prepared at a substrate temperature of 270°C.
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