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Towards high‐eficiency silicon solar cells by rapid thermal processing
Author(s) -
Hartiti B.,
Schindler R.,
Slaoui A.,
Wagner B.,
Muller J. C.,
Reis I.,
Eyer A.,
Siffert P.
Publication year - 1994
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670020208
Subject(s) - materials science , thermal , silicon , rapid thermal processing , isothermal process , optoelectronics , process engineering , engineering physics , engineering , thermodynamics , physics
Rapid thermal processing can offer many advantages, such as small overall thermal budget and low power and time consumption, in a strategy focused on cost‐effective techniques for the preparation of solar cells in a continuous way. We show here that this very short duration (a few tens of seconds) of isothermal heating performed in a lamp furnace can be used for many thermal steps of silicon solar cell processing. Rapid thermal processing was applied to form the p‐n junction from a phosphorus‐doped spin‐on silica film deposted on (100) silicon substrates at typical processing temperatures between 800 and 1100°C. the solar cells showed conversion efficiencies as good as those processed in a conventional way.