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Decreased emitter sheet resistivity loss in high‐eficiency silicon solar cells
Author(s) -
Aberle Armin G.,
Wenham Stuart R.,
Green Martin A.,
Heiser Gernot
Publication year - 1994
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670020103
Subject(s) - common emitter , silicon , ohmic contact , materials science , theory of solar cells , optoelectronics , solar cell , mechanics , polymer solar cell , nanotechnology , physics , layer (electronics)
State‐of‐the‐art two‐dimensional (2D) numerical semiconductor device simulation tools are applied to bifacially contacted silicon solar cells of practical dimensions in order to investigate the 2D effects arising from ohmic voltage drops in cell emitters due to finite front metal grid line spacings. the 2D simulations show that for typical front finger spacings of high‐efficiency silicon solar cells the minority carrier flow in the base deviates strongly from the purely linear flow assumed by one‐dimensional (1D) theory. Compared to conventional 1D theory, this 2D effect results in reduced emitter sheet resistivity losses, an increased optimum front finger spacing and a reduced impact of finger spacing on cell efficiency. the 2D effects are of particular importance for concentrator solar cells. The 2D simulations presented in this work considerably improve the general understanding of internal device physics of high‐efficiency silicon solar cells and reveal the limits of 1D models for the simulation of these devices.