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Short communication: Effects of heat treatments and CdCl 2 , pretreatments on the stoichiometries of solution‐grown CdS thin films
Author(s) -
Niles David W.,
Hasoon Falah S.
Publication year - 1993
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670010404
Subject(s) - stoichiometry , thin film , sulfur , cadmium , cadmium sulfide , layer (electronics) , materials science , nitrogen , chemistry , coating , analytical chemistry (journal) , inorganic chemistry , metallurgy , nanotechnology , chromatography , organic chemistry
Solution grorwth of CdS on SnO 2 ‐coated glass with subsequent heat treatments is known to produce stoichiometric CdS thin films with characteristic thicknesses of about 1000 Å. We show that heating solution‐grown CdS thin films in a nitrogen atmosphere to ⩾ 450° C results in sulphur loss. Heating to 550°C leads to a 50% loss of sulphur, leaving the entire 1000‐A CdS thin film with a concentration of about 75 at.% Cd and 25 at.% S. However, dipping the CdS thin films in a CdCl 2 solution prior to heating coats the CdS, leaving a CdCl 2 layer that acts as a protective coating and prohibits the loss of sulphur. Cadmium sulphide thin films dipped in a CdCl 2 solution and then heated to 550°C are stoichiometric.