Development of a new heterojunction structure (ACJ ‐HIT) and its application to polycrystalline silicon solar cells | Zendy

Tanaka Makoto | Zendy; Taguchi Mikio | Zendy; Takahama Tsuysohi | Zendy; Sawada Toru | Zendy; Kuroda Shigeru | Zendy; Matsuyama Takao | Zendy; Tsuda Shinya | Zendy; Takeoka Akio | Zendy; Nakano Shoichi | Zendy; Hanafusa Hiroshi | Zendy; Kuwano Yukinori | Zendy

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Development of a new heterojunction structure (ACJ ‐HIT) and its application to polycrystalline silicon solar cells

Author(s) -

Tanaka Makoto,

Taguchi Mikio,

Takahama Tsuysohi,

Sawada Toru,

Kuroda Shigeru,

Matsuyama Takao,

Tsuda Shinya,

Takeoka Akio,

Nakano Shoichi,

Hanafusa Hiroshi,

Kuwano Yukinori

Publication year - 1993

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.4670010201

Subject(s) - heterojunction , polycrystalline silicon , passivation , materials science , optoelectronics , solar cell , silicon , doping , layer (electronics) , crystallite , nanotechnology , engineering physics , metallurgy , engineering , thin film transistor

A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology. In this structure a non‐doped a‐Si thin layer was inserted between the p(a‐Si)/n(c‐Si) heterojunction, improving the output characteristics and achieving a conversion efficiency of 18.1%. This structure was applied to cast polycrystalline silicon solar cells of a practical size. A high conversion efficeincy of 13.6% was obtained with a cell size of 10 cm × 10 cm using various technologies, including hydrogen plasma passivation.

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