Premium
Development of a new heterojunction structure (ACJ ‐HIT) and its application to polycrystalline silicon solar cells
Author(s) -
Tanaka Makoto,
Taguchi Mikio,
Takahama Tsuysohi,
Sawada Toru,
Kuroda Shigeru,
Matsuyama Takao,
Tsuda Shinya,
Takeoka Akio,
Nakano Shoichi,
Hanafusa Hiroshi,
Kuwano Yukinori
Publication year - 1993
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670010201
Subject(s) - heterojunction , polycrystalline silicon , passivation , materials science , optoelectronics , solar cell , silicon , doping , layer (electronics) , crystallite , nanotechnology , engineering physics , metallurgy , engineering , thin film transistor
Abstract A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology. In this structure a non‐doped a‐Si thin layer was inserted between the p(a‐Si)/n(c‐Si) heterojunction, improving the output characteristics and achieving a conversion efficiency of 18.1%. This structure was applied to cast polycrystalline silicon solar cells of a practical size. A high conversion efficeincy of 13.6% was obtained with a cell size of 10 cm × 10 cm using various technologies, including hydrogen plasma passivation.