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Recent progress in research and development of crystalline silicon solar cells in Japan
Author(s) -
Saitoh Tadashi,
Shimokawa Ryuichi,
Hayashi Yutaka
Publication year - 1993
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.4670010103
Subject(s) - passivation , polycrystalline silicon , materials science , silicon , fabrication , solar cell , monocrystalline silicon , substrate (aquarium) , crystalline silicon , grain boundary , engineering physics , nanotechnology , quantum dot solar cell , optoelectronics , metallurgy , engineering , microstructure , medicine , oceanography , alternative medicine , layer (electronics) , pathology , geology , thin film transistor
Recently, the research and development of crystalline silicon solar cells in Japan has greatly advanced. Fundamental research has been conducted on the recombination and passivation of minority carriers at Si/SiO 2 interfaces and in those bulk regions containing grain boundaries. Qualities of silicon feedstock and substrates have been improved and large‐area cell efficiencies using Czochralski single and cast polycrystalline substrates have reached 20% and 17%, respectively, by using low‐cost cell fabrication processes. Such high efficiency values are realized by tenacious improvement of substrate quality and the development of new processes for fabricating solar cells.