Thin‐film (25.5 μm) solar cells from layer transfer using porous silicon with 32.7 mA/cm 2  short‐circuit current density | Zendy

Feldrapp Karlheinz | Zendy; Horbelt Renate | Zendy; Auer Richard | Zendy; Brendel Rolf | Zendy

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Thin‐film (25.5 μm) solar cells from layer transfer using porous silicon with 32.7 mA/cm 2 short‐circuit current density

Author(s) -

Feldrapp Karlheinz,

Horbelt Renate,

Auer Richard,

Brendel Rolf

Publication year - 2003

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.465

Subject(s) - monocrystalline silicon , current density , materials science , photolithography , porous silicon , optoelectronics , layer (electronics) , reflector (photography) , power density , porosity , current (fluid) , common emitter , silicon , solar cell , doping , optics , energy conversion efficiency , power (physics) , nanotechnology , electrical engineering , composite material , physics , light source , engineering , quantum mechanics

We fabricate a 25.5‐μm‐thick monocrystalline Si solar cell with a confirmed power conversion efficiency of 15.4% and an area of 3.88 cm 2 using a layer transfer process with porous Si. The process is free of photolithography and contains no high‐temperature oxidation steps. We investigate three design features that improve the short‐circuit current density to a value of 32.7 mA/cm 2 under AM1.5 illumination. The detached back reflector contributes 2 mA/cm 2 , a reduced front‐surface reflectance accounts for an additional 2 mA/cm 2 and a reduced base doping increases the current density by 1 mA/cm 2 . Copyright © 2002 John Wiley & Sons, Ltd.

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