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Thin‐film (25.5 μm) solar cells from layer transfer using porous silicon with 32.7 mA/cm 2 short‐circuit current density
Author(s) -
Feldrapp Karlheinz,
Horbelt Renate,
Auer Richard,
Brendel Rolf
Publication year - 2003
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.465
Subject(s) - monocrystalline silicon , current density , materials science , photolithography , porous silicon , optoelectronics , layer (electronics) , reflector (photography) , power density , porosity , current (fluid) , common emitter , silicon , solar cell , doping , optics , energy conversion efficiency , power (physics) , nanotechnology , electrical engineering , composite material , physics , light source , engineering , quantum mechanics
We fabricate a 25.5‐μm‐thick monocrystalline Si solar cell with a confirmed power conversion efficiency of 15.4% and an area of 3.88 cm 2 using a layer transfer process with porous Si. The process is free of photolithography and contains no high‐temperature oxidation steps. We investigate three design features that improve the short‐circuit current density to a value of 32.7 mA/cm 2 under AM1.5 illumination. The detached back reflector contributes 2 mA/cm 2 , a reduced front‐surface reflectance accounts for an additional 2 mA/cm 2 and a reduced base doping increases the current density by 1 mA/cm 2 . Copyright © 2002 John Wiley & Sons, Ltd.