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Influence of the Cu(In,Ga)Se 2 thickness and Ga grading on solar cell performance
Author(s) -
Lundberg Olle,
Bodegård Marika,
Malmström Jonas,
Stolt Lars
Publication year - 2003
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.462
Subject(s) - copper indium gallium selenide solar cells , materials science , open circuit voltage , absorbance , short circuit , solar cell , optoelectronics , analytical chemistry (journal) , voltage , optics , chemistry , electrical engineering , physics , chromatography , engineering
Abstract Thin‐film solar cells with Cu(In,Ga)Se 2 (CIGS) absorber layers ranging from 1.8 to 0.15 μm in thickness were fabricated by co‐evaporation, with both homogeneous and Ga/(Ga + In) graded composition. The absorption of the CIGS layers was determined and compared with corresponding QE measurements in order to obtain the optical related losses. The material characterization included XRD as well as cross‐sectional SEM analysis. Devices with CIGS layers of all thicknesses were fabricated, and down to 0.8–1 μm they showed a maintained high performance (η ∼ 15%). When the CIGS layer was further reduced in thickness the loss in performance increased. The main loss was observed for the short‐circuit current, although the loss was not only due to a reduced absorbance. The open‐circuit voltage was essentially not affected by the reduction of the CIGS thickness, while the fill factor showed a slight decrease. The fill factor loss was eliminated by introducing a Ga/(Ga+In) graded CIGS, which also resulted in an increased open‐circuit voltage of 20–30 mV for all CIGS thicknesses. Device results of 16.1% efficiency at 1.8 μm CIGS thickness, 15.0% at 1.0 μm and 12.1% at 0.6 μm (total area without anti‐reflective coating) were achieved. Copyright © 2002 John Wiley & Sons, Ltd.

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