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Progress in the development of metamorphic multi‐junction III–V space solar cells
Author(s) -
Sinharoy Samar,
Patton Martin O.,
Valko Thomas M.,
Weizer Victor G.
Publication year - 2002
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.449
Subject(s) - suns in alchemy , triple junction , solar cell , optoelectronics , tandem , materials science , concentrator , solar cell efficiency , photovoltaic system , gallium arsenide , engineering physics , optics , electrical engineering , physics , engineering , composite material
Abstract Theoretical calculations have shown that highest‐efficiency III–V multi‐junction solar cells require alloy structures that cannot be grown on a lattice‐matched substrate. Ever since the first demonstration of high‐efficiency metamorphic single‐ junction 1.1 and 1.2 eV InGaAs solar cells, interest has grown in the development of multi‐junction cells of this type, using graded buffer layer technology. Essential Research Incorporated (ERI) is currently developing a dual‐junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air‐mass zero (AM0), one‐sun efficiency of 27%, and 100‐sun efficiency of 31.1%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple‐junction concentrator tandem cell (projected practical AM0 efficiency 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual‐junction cell performance. For the triple‐junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper. Copyright © 2002 John Wiley & Sons, Ltd.