Front and rear silicon‐nitride‐passivated multicrystalline silicon solar cells with an efficiency of 18.1% | Zendy

Mittelstädt L. | Zendy; Dauwe S. | Zendy; Metz A. | Zendy; Hezel R. | Zendy; Häßler C. | Zendy

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Front and rear silicon‐nitride‐passivated multicrystalline silicon solar cells with an efficiency of 18.1%

Author(s) -

Mittelstädt L.,

Dauwe S.,

Metz A.,

Hezel R.,

Häßler C.

Publication year - 2002

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.423

Subject(s) - passivation , silicon nitride , plasma enhanced chemical vapor deposition , materials science , silicon , optoelectronics , nitride , solar cell , crystalline silicon , aluminium , nanotechnology , layer (electronics) , composite material

A solar cell process designed to utilise low‐temperature plasma‐enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) films as front and rear surface passivation was applied to fabricate multicrystalline silicon (mc‐Si) solar cells. Despite the simple photolithography‐free processing sequence, an independently confirmed efficiency of 18.1% (cell area 2 × 2 cm 2 ) was achieved. This excellent efficiency can be predominantly attributed to the superior quality of the rear surface passivation scheme consisting of an SiN x film in combination with a local aluminium back‐surface field (LBSF). Thus, it is demonstrated that low‐temperature PECVD SiN x films are well suited to achieve excellent rear surface passivation on mc‐Si. Copyright © 2002 John Wiley & Sons, Ltd.

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