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Identifying dominant recombination locations in double‐graded Cu(In 1‐x Ga x )(Se 1‐y S y ) 2 solar cells and their impact on the performance at different light intensities
Author(s) -
Ahmed Hamsa,
Elshabasi Mohamed,
Gonzalez Marco A.,
Richter Michael,
Stölzel Marko,
Weber Alfons,
Heise Stephan J.,
Dalibor Thomas,
Schäfer Sascha,
Parisi Jürgen
Publication year - 2022
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3543
Subject(s) - recombination , solar cell , materials science , band gap , range (aeronautics) , work (physics) , molecular physics , atomic physics , physics , optoelectronics , chemistry , thermodynamics , biochemistry , composite material , gene
In this work, the impact of different Cu(In 1‐x Ga x )(Se 1‐y S y ) 2 solar cell structures on the shift of the dominant recombination region at varying light intensities was investigated. A new parameter was proposed to account for the dominant recombination region relative to the minimum band gap location in a graded absorber. Additionally, the influence of shunt resistances on the dominant recombination location for different CIGSSe solar cell structures was modeled. Within the investigated illumination range, correlations between the dominant recombination location and solar cell parameters as well as their temperature dependence were discussed.