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Manufacturing tolerances of terrestrial concentrator p‐on‐n GaAs solar cells
Author(s) -
Algora Carlos,
Díaz Vicente
Publication year - 2001
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.352
Subject(s) - common emitter , concentrator , doping , materials science , solar cell , optoelectronics , equivalent series resistance , coating , engineering physics , process window , optics , nanotechnology , electrical engineering , engineering , physics , lithography , voltage
The increasing interest in the manufacturing of terrestrial concentrator GaAs solar cells calls for the need to establish the guidelines, assessments and tolerances of the production process. Accordingly, this paper analyses, for the first time, the tolerances of this process. The influence of the entire solar cell (antireflecting coatings, semiconductor structure and series resistance) is considered. More specifically, the parameters analysed are: the thickness of the double antireflecting coating, window thickness, emitter thickness, base thickness, emitter doping level, base doping level, shadowing factor and specific front contact resistance. The results are presented in the form of iso‐efficiency plots as a function of the aforementioned parameters. Therefore, besides the conclusions extracted in this paper, numerous others may be formed according to particular necessities. Copyright © 2001 John Wiley & Sons, Ltd.