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Sustainable Cu 2 ZnSnSe 4 photovoltaic cells fabricated with a sputtered CdS buffer layer
Author(s) -
Lai FangI,
Yang JuiFu,
Hsu YuChao,
Kuo ShouYi
Publication year - 2020
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3307
Subject(s) - solar cell , layer (electronics) , materials science , photovoltaic system , buffer (optical fiber) , chemical bath deposition , copper , evaporation , thin film , deposition (geology) , chemical engineering , nanotechnology , optoelectronics , metallurgy , computer science , electrical engineering , telecommunications , physics , engineering , paleontology , sediment , biology , thermodynamics
In this study, the effect of the Cu concentration on the characteristics of the Cu 2 ZnSnSe 4 (CZTSe) absorber layers and solar cells was systematically analyzed by postselenization of the evaporated precursor deposits. The results demonstrated that an increase in the copper concentration of the precursor linearly increased the Cu content in the final CZTSe thin‐film formation. This significantly increased the particle size and improved the re‐evaporation loss of the SnSe, thus improving the solar cell characteristics. However, a further increase in the Cu concentration reduced the quality of the absorber layer and formed either Cu x Se or CTSe secondary phases, which was detrimental to the solar cell characteristics. Here, we introduce a sputtered CdS buffer layer for the CZTSe solar cells. These findings offer new research directions for solving the persistent challenges in the chemical bath deposition (CBD) of the CdS in the CZTSe solar cells.