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Interdigitated back‐contacted structure: A different approach towards high‐efficiency ultrathin copper indium gallium (di)selenide solar cells
Author(s) -
Rezaei Nasim,
Procel Paul,
Simor Marcel,
Vroon Zeger,
Zeman Miro,
Isabella Olindo
Publication year - 2020
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3296
Subject(s) - copper indium gallium selenide solar cells , gallium , indium , optoelectronics , passivation , materials science , solar cell , band gap , copper , energy conversion efficiency , open circuit voltage , selenide , layer (electronics) , voltage , nanotechnology , electrical engineering , metallurgy , engineering , selenium
An interdigitated back‐contacted (IBC) configuration is proposed for submicron copper indium gallium (di)selenide (CIGS). In a modelling platform, the structure was opto‐electrically optimized for maximum efficiency. The results are compared with a reference front/back‐contacted (FBC) solar cell with similar absorber thickness and exhibiting 11.9% efficiency. The electrical passivation at the front side is accomplished by an Al 2 O 3 layer, which is endowed with negative fixed charges. The results indicate that with an optimal geometry and engineered bandgap grading, the efficiency of the new IBC structure can reach 17%. Additionally, with a reasonably low defect density in the absorber layer, efficiencies as high as 19.7% and open‐circuit voltage comparable with that of the record solar cell are possible with the IBC structure.