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Analysis of nonradiative recombination in quantum dot solar cells and materials
Author(s) -
Zhu Lin,
Lee KanHua,
Yamaguchi Masafumi,
Akiyama Hidefumi,
Kanemitsu Yoshihiko,
Araki Kenji,
Kojima Nobuaki
Publication year - 2019
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3110
Subject(s) - quantum dot , recombination , optoelectronics , detailed balance , spontaneous emission , theory of solar cells , solar cell , band gap , open circuit voltage , materials science , solar cell efficiency , physics , voltage , chemistry , optics , laser , biochemistry , quantum mechanics , gene
Quantum dot (QD) solar cells have drawn much attention in research because of their tunable band gap and potential to realize many novel concepts, such as intermediate transitions. However, high nonradiative recombination rates in the QD layer stand in the way of realizing high‐efficiency QD solar cells. In this paper, the efficiency potential of QD solar cells is discussed based on external radiative efficiency ( ERE ), open‐circuit voltage loss, fill factor loss, and nonradiative recombination loss via current‐voltage characteristics in a detailed balance model. The intrinsic loss of QD solar cells substantially increases with increasing binding energy and volume density of the QDs. The ERE of QD solar cells decreases with increasing binding energy and volume density of the QDs due to nonradiative recombination.