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First down converter multilayers integration in an industrial Si solar cell process
Author(s) -
Dumont Lucile,
Cardin Julien,
Labbé Christophe,
Frilay Cédric,
Anglade PierreMatthieu,
Yu IngSong,
Vallet Maxime,
Benzo Patrick,
Carrada Marzia,
Stiévenard Didier,
Merabet Hocine,
Gourbilleau Fabrice
Publication year - 2019
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3071
Subject(s) - materials science , ion , photovoltaic system , solar cell , optoelectronics , deposition (geology) , energy conversion efficiency , sputter deposition , silicon , cavity magnetron , sputtering , thin film , nanotechnology , electrical engineering , chemistry , paleontology , organic chemistry , sediment , biology , engineering
Down converter SiN x :Yb 3+ /SiN x :Tb 3+ multilayers are deposited by reactive magnetron cosputtering with the objective of optimizing the interaction distance between Tb 3+ and Yb 3+ ions to favor a better light management in Si solar cells. Those Si‐based multilayers are developed to be compatible with the Si photovoltaic technology. The deposition parameters are optimized to enhance the emission of the Yb 3+ ions in the IR region. The emission efficiency of such multilayer structure is compared with a mixed RE SiN x :Tb 3+ ‐Yb 3+ layer evidencing a gain resulting from a better management of the Tb 3+ and Yb 3+ ions distance. At the end, we integrate the growth of such a multilayer in an industrial Si solar cell process and demonstrate the existence of a frequency conversion effect that is promising for the future increase of the Si solar cell efficiency.