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High open‐circuit voltage CuSbS 2 solar cells achieved through the formation of epitaxial growth of CdS/CuSbS 2 hetero‐interface by post‐annealing treatment
Author(s) -
Zhang Yuanfang,
Huang Jialiang,
Yan Chang,
Sun Kaiwen,
Cui Xin,
Liu Fangyang,
Liu Ziheng,
Zhang Xueyun,
Liu Xu,
Stride John A.,
Green Martin A.,
Hao Xiaojing
Publication year - 2019
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3061
Subject(s) - photoluminescence , materials science , annealing (glass) , open circuit voltage , epitaxy , optoelectronics , heterojunction , solar cell , microstructure , voltage , nanotechnology , electrical engineering , composite material , layer (electronics) , engineering
The earth‐abundant and environmentally‐friendly CuSbS 2 solar cells have been struggling with low device performance, especially poor open circuit voltage (V oc ). In this work, post‐annealing treatment of the CuSbS 2 /CdS heterojunction performed on CuSbS 2 ‐based solar cells was firstly reported. With this treatment, we demonstrated CuSbS 2 solar cells with a record V oc of 622 mV. The improvement of device performance was found peaked at 250°C post‐annealing which mainly benefits from the significantly boosted open‐circuit voltage and short‐circuit current. The study of microstructure by high‐resolution transmission electron microscopy revealed that such improvement could be attributed to the formation of epitaxial CuSbS 2 /CdS hetero‐interface upon heat treatment, which reduces the interface defect density that may lead to reduced V oc deficit. Besides, results of photoluminescence and time‐resolved photoluminescence measurements also indicated improved electrical properties of completed devices with higher photoluminescence intensity and longer minority carrier lifetime.