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Efficiency increased to 15.2% for ultra‐thin Cu(In,Ga)Se 2 solar cells
Author(s) -
Mansfield Lorelle M.,
Kanevce Ana,
Harvey Steven P.,
Bowers Karen,
Beall Carolyn,
Glynn Stephen,
Repins Ingrid L.
Publication year - 2018
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3033
Subject(s) - copper indium gallium selenide solar cells , thin film solar cell , materials science , thin film , optoelectronics , deposition (geology) , solar cell , recombination , nanotechnology , chemistry , geology , paleontology , biochemistry , sediment , gene
Abstract We improved the efficiency of ultra‐thin (0.49‐μm‐thick) Cu(In,Ga)Se 2 solar cells to 15.2% (officially measured). To achieve these results, we modified growth conditions from the 3‐stage process but did not add post‐deposition treatments or additional material layers. The increase in device efficiency is attributed to a steeper Ga gradient in the CIGS with higher Ga content near the Mo back contact, which can hinder electron‐hole recombination at the interface. We discuss device measurements and film characterization for ultra‐thin CIGS. Modeling is presented that shows the route to even higher efficiencies for devices with CIGS thicknesses of 0.5 μm.