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Voltage‐dependent photocurrent in irradiated GaAs solar cells
Author(s) -
Salzberger Manuel,
Rutzinger Martin,
Nömayr Christel,
Lugli Paolo,
Zimmermann Claus G.
Publication year - 2018
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2983
Subject(s) - photocurrent , depletion region , diffusion , irradiation , materials science , diffusion capacitance , space charge , optoelectronics , electron , solar cell , capacitance , charge carrier , voltage , molecular physics , atomic physics , semiconductor , chemistry , physics , electrode , quantum mechanics , nuclear physics , thermodynamics
GaAs single junction cells, representative of the middle cell in triple junction Ga 0.5 In 0.5 P/GaAs/Ge cells, were irradiated with various fluences of 1‐ and 3‐MeV electrons as well as 1‐MeV protons. The light I‐V curves measured at room temperature exhibit a voltage‐dependent photocurrent. The photocurrent is modeled taking into account the voltage‐dependent width of the space charge region in combination with a strongly decreased minority carrier diffusion length. By extracting the width of the space charge region from capacitance measurements and the base layer diffusion length from the external quantum efficiency of the cell, the experimental behavior is reproduced accurately.