Premium
Gapless point back surface field for the counter doping of large‐area interdigitated back contact solar cells using a blanket shadow mask implantation process
Author(s) -
Kim YoungSu,
Mo Chanbin,
Lee Doo Youl,
Park Sung Chan,
Kim Dongseop,
Nam Junggyu,
Yang JungYup,
Suh Dongchul,
Kim HyunJong,
Park Hyomin,
Park Se Jin,
Kim Donghwan,
Song Jungho,
Lee HaeSeok,
Park Sungeun,
Kang Yoonmook
Publication year - 2017
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2910
Subject(s) - common emitter , materials science , doping , gapless playback , boron , optoelectronics , solar cell , nanotechnology , chemistry , condensed matter physics , physics , organic chemistry
Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied V oc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large‐area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.