Premium
Enhanced Sb 2 Se 3 solar cell performance through theory‐guided defect control
Author(s) -
Liu Xinsheng,
Xiao Xun,
Yang Ye,
Xue DingJiang,
Li DengBing,
Chen Chao,
Lu Shuaicheng,
Gao Liang,
He Yisu,
Beard Matthew C.,
Wang Gang,
Chen Shiyou,
Tang Jiang
Publication year - 2017
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2900
Subject(s) - compensation (psychology) , materials science , photovoltaic system , layer (electronics) , solar cell , optoelectronics , evaporation , engineering physics , coating , substrate (aquarium) , nanotechnology , electrical engineering , engineering , geology , physics , psychology , oceanography , psychoanalysis , thermodynamics
Abstract Defects present in the absorber layer largely dictate photovoltaic device performance. Recently, a binary photovoltaic material, Sb 2 Se 3 , has drawn much attention due to its low‐cost and nontoxic constituents and rapid performance promotion. So far, however, the intrinsic defects of Sb 2 Se 3 remain elusive. Here, through a combined theoretical and experimental investigation, we revealed that shallow acceptors, Se Sb antisites, are the dominant defects in Sb 2 Se 3 produced in an Se‐rich environment, where deep donors, Sb Se and V Se , dominate in Sb 2 Se 3 produced in an Se‐poor environment. We further constructed a superstrate CdS/Sb 2 Se 3 thin‐film solar cell achieving 5.76% efficiency through in situ Se compensation during Sb 2 Se 3 evaporation and through careful optimization of absorber layer thickness. The understanding of intrinsic defects in Sb 2 Se 3 film and the demonstrated success of in situ Se compensation strategy pave the way for further efficiency improvement of this very promising photovoltaic technology. Copyright © 2017 John Wiley & Sons, Ltd.