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Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement
Author(s) -
Salzberger Manuel,
Nömayr Christel,
Lugli Paolo,
Messenger Scott R.,
Zimmermann Claus G.
Publication year - 2017
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2888
Subject(s) - degradation (telecommunications) , displacement (psychology) , energy (signal processing) , triple junction , atomic physics , irradiation , solar cell , proton , materials science , analytical chemistry (journal) , electron , molecular physics , chemistry , physics , optoelectronics , electronic engineering , quantum mechanics , psychology , chromatography , engineering , psychotherapist
Characteristic degradation curves for proton and electron induced degradation of triple junction (3J) and isotype Ga 0.5 In 0.5 P/GaAs/Ge solar cells were obtained. The displacement damage dose methodology in combination with a varying effective threshold energy for atomic displacement T d , e f f was used to analyze 3G28 and 3G30 3J cell data. The nonionizing energy loss (NIEL) was calculated analytically, and T d , e f f was explicitly introduced as a fit parameter. Using the GaAs NIEL in fitting the 3J degradation data, a T d , e f f of 21 eV was determined, whereas a T d , e f f of 36 eV was found using the Ga 0.5 In 0.5 P NIEL. In GaAs and Ga 0.5 In 0.5 P single junction cells, the effective threshold energies for atomic displacement of 22 and 34 eV were determined. Copyright © 2017 John Wiley & Sons, Ltd.
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