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Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures
Author(s) -
Yurong Nelvin Leong,
Tan Kian Hua,
Loke Wan Kai,
Wicaksono Satrio,
Li Daosheng,
Yoon Soon Fatt,
Sharma Prithu,
Milakovich Tim,
Bulsara Mayank T.,
Fitzgerald Eugene A.
Publication year - 2017
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2870
Subject(s) - substrate (aquarium) , materials science , photovoltaic system , molecular beam epitaxy , optoelectronics , energy conversion efficiency , nitrogen , epitaxy , antimony , solar cell , open circuit voltage , short circuit , voltage , analytical chemistry (journal) , chemistry , nanotechnology , electrical engineering , biology , metallurgy , layer (electronics) , engineering , chromatography , ecology , organic chemistry
We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on Si/Si–Ge substrate using molecular beam epitaxy at different growth temperatures. The sample grown at 420°C showed the highest energy conversion efficiency, with a short circuit current of 18 mA/cm 2 and open circuit voltage of 0.53 V. With different growth temperature, performance of the cells degrade, which is attributed to the increase of nitrogen‐related defects and the decrease of antimony incorporation at higher growth temperature. Copyright © 2017 John Wiley & Sons, Ltd.