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Thin Al 2 O 3 passivated boron emitter of n‐type bifacial c‐Si solar cells with industrial process
Author(s) -
Lu Guilin,
Zheng Fei,
Wang Jianqiang,
Shen Wenzhong
Publication year - 2017
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2859
Subject(s) - common emitter , passivation , materials science , boron , sheet resistance , solar cell , doping , optoelectronics , nanotechnology , analytical chemistry (journal) , layer (electronics) , chemistry , organic chemistry , chromatography
We have presented thin Al 2 O 3 (~4 nm) with SiN x :H capped (~75 nm) films to effectively passivate the boron‐doped p + emitter surfaces of the n‐type bifacial c‐Si solar cells with BBr 3 diffusion emitter and phosphorus ion‐implanted back surface field. The thin Al 2 O 3 capped with SiN x :H structure not only possesses the excellent field effect and chemical passivation, but also establishes a simple cell structure fully compatible with the existing production lines and processes for the low‐cost n‐type bifacial c‐Si solar cell industrialization. We have successfully achieved the large area (238.95 cm 2 ) high efficiency of 20.89% (front) and 18.45% (rear) n‐type bifacial c‐Si solar cells by optimizing the peak sintering temperature and fine finger double printing technology. We have further shown that the conversion efficiency of the n‐type bifacial c‐Si solar cells can be improved to be over 21.3% by taking a reasonable high emitter sheet resistance. Copyright © 2017 John Wiley & Sons, Ltd.