Cu 2 ZnSnS 4  photovoltaic cell with improved efficiency fabricated by high‐temperature annealing after CdS buffer‐layer deposition | Zendy

Tajima Shin | Zendy; Umehara Mitsutaro | Zendy; Hasegawa Masaki | Zendy; Mise Takahiro | Zendy; Itoh Tadayoshi | Zendy

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Cu 2 ZnSnS 4 photovoltaic cell with improved efficiency fabricated by high‐temperature annealing after CdS buffer‐layer deposition

Author(s) -

Tajima Shin,

Umehara Mitsutaro,

Hasegawa Masaki,

Mise Takahiro,

Itoh Tadayoshi

Publication year - 2017

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.2837

Subject(s) - czts , annealing (glass) , materials science , optoelectronics , energy conversion efficiency , photovoltaic system , short circuit , solar cell , thin film , open circuit voltage , layer (electronics) , active layer , quantum efficiency , nanotechnology , voltage , composite material , electrical engineering , engineering , thin film transistor

To improve the photovoltaic properties of Cu 2 ZnSnS 4 (CZTS) cells, we investigated the effect of both the thickness of the deposited CdS layers and the post‐annealing temperature following CdS deposition on the photovoltaic properties of CZTS cells using a two‐layer CZTS structure. By depositing a thin CdS layer (40 nm) followed by high temperature annealing (603 K), we observed a remarkable increase in the short‐circuit current density because of the enhancement of the external quantum efficiency in the wavelength range of 400–800 nm. The best CZTS cell exhibited a conversion efficiency of 9.4% in the active area (9.1% in the designated area). In addition, we also fabricated a CZTS cell with open‐circuit voltage of 0.80 V by appropriately tuning the composition of the CZTS layers. Copyright © 2016 John Wiley & Sons, Ltd.

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