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In situ sulfurization to generate Sb 2 (Se 1 − x S x ) 3 alloyed films and their application for photovoltaics
Author(s) -
Yang Bo,
Qin Sikai,
Xue Dingjiang,
Chen Chao,
He Yisu,
Niu Dongmei,
Huang Han,
Tang Jiang
Publication year - 2017
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2819
Subject(s) - band gap , crystallite , materials science , thin film , phase (matter) , analytical chemistry (journal) , characterization (materials science) , evaporation , optics , crystallography , optoelectronics , nanotechnology , chemistry , metallurgy , physics , organic chemistry , chromatography , thermodynamics
Because of its tunable band gap and band position, Sb 2 (Se 1 − x S x ) 3 (0 ≤ x ≤ 1) is a promising light‐absorbing material for photovoltaic device applications. However, no systematic study on the synthesis and characterization of single‐phase polycrystalline Sb 2 (Se 1 − x S x ) 3 thin films has been reported. Through introducing in situ sulfurization into the rapid thermal evaporation process, a series of single‐phase, highly crystalline Sb 2 (Se 1 − x S x ) 3 films with x = 0.09, 0.20, 0.31, and 0.43 were successfully obtained, with the corresponding band gap, band position and film morphology fully revealed. Futhermore, solar cells with superstrate ITO/CdS/Sb 2 (Se 1 − x S x ) 3 /Au structure were fabricated and carefully optimized. Finally, a champion device having 5.79% solar conversion efficiency was obtained employing uniform Sb 2 (Se 0.80 S 0.20 ) 3 absorber layer. Our experimental investigation confirmed that Sb 2 (Se 1 − x S x ) 3 is indeed a very promising absorber material worth further optimization. Copyright © 2016 John Wiley & Sons, Ltd.