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Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests
Author(s) -
Orlando Vincenzo,
Gabás Mercedes,
Galiana Beatriz,
EspinetGonzález Pilar,
Palanco Santiago,
Nuñez Neftali,
Vázquez Manuel,
Araki Kenji,
Algora Carlos
Publication year - 2017
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2818
Subject(s) - suns in alchemy , electroluminescence , scanning electron microscope , materials science , optoelectronics , triple junction , accelerated aging , concentrator , transmission electron microscopy , scanning transmission electron microscopy , accelerated life testing , soldering , x ray photoelectron spectroscopy , optics , composite material , nanotechnology , chemical engineering , physics , psychology , developmental psychology , maturity (psychological) , layer (electronics) , engineering
Accelerated life tests are frequently used to provide reliability information in a moderate period of time (weeks or months), and after that, a failure analysis is compulsory to detect the failure origins. In this paper, a failure analysis has been carried out after a temperature accelerated life test on lattice matched GaInP/Ga(In)As/Ge triple junction commercial solar cells. Solar cells were forward biased in darkness inside three climatic chambers in order to emulate the photo‐generated current under nominal working conditions (a concentration level of 820 suns). After the accelerated aging test, a characterization of the resulting cells by means of quantum efficiency, dark and illumination I–V curves, electroluminescence, scanning electron microscope, energy dispersive X‐ray, scanning transmission electron microscope and X‐ray photoelectron spectroscopy has been carried out. Current is identified as the cause of degradation while temperature just dominates the accelerating factor of the aging test. Current promotes the front metal damage produced by the chemical evolution of the electroplating impurities together with those of the tab soldering process. Semiconductor structure does not seem to be responsible of any failure. Therefore, this kind of lattice matched GaInP/Ga(In)As/Ge triple junction solar cells, that as of 2016, are the workhorse of CPV technology, exhibits as a very robust device if the front metal connection is properly accomplished. Copyright © 2016 John Wiley & Sons, Ltd.