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High‐efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4‐terminal tandem cells
Author(s) -
ElHuni Walid,
Migan Anne,
Djebbour Zakaria,
Salvestrini JeanPaul,
Ougazzaden Abdallah
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2807
Subject(s) - indium , materials science , optoelectronics , indium gallium nitride , gallium , gallium nitride , tandem , solar cell , copper indium gallium selenide solar cells , indium nitride , photovoltaic system , nitride , nanotechnology , electrical engineering , metallurgy , engineering , composite material , layer (electronics)
In this work, we present a double‐junction solar cell with a crystalline silicon solar cell as a bottom junction and an indium gallium nitride‐based semibulk‐structured solar cell as a top junction. Using SILVACO Atlas and taking into account polarization effects in III‐N materials, we have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2‐terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have also modeled a 4‐terminal configuration showing the same performance (i.e. conversion efficiency close to 29%) where only 25% of indium content is needed. Copyright © 2016 John Wiley & Sons, Ltd.