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High‐efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE‐MOCVD technique
Author(s) -
Tukiainen Antti,
Aho Arto,
Gori Gabriele,
Polojärvi Ville,
Casale Mariacristina,
Greco Erminio,
Isoaho Riku,
Aho Timo,
Raappana Marianna,
Campesato Roberta,
Guina Mircea
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2784
Subject(s) - metalorganic vapour phase epitaxy , optoelectronics , materials science , chemical vapor deposition , wafer , solar cell , fabrication , gallium arsenide , epitaxy , substrate (aquarium) , molecular beam epitaxy , nanotechnology , layer (electronics) , biology , medicine , ecology , alternative medicine , pathology
Triple‐junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal‐organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4‐inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high‐efficiency tandem solar cells with three or more junctions. Copyright © 2016 John Wiley & Sons, Ltd.