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Effect of Sb on the quantum efficiency of GaInP solar cells
Author(s) -
Barrigón Enrique,
Barrutia Laura,
Ochoa Mario,
ReyStolle Ignacio,
Algora Carlos
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2777
Subject(s) - optoelectronics , band gap , materials science , quantum efficiency , open circuit voltage , solar cell , wavelength , energy conversion efficiency , voltage , physics , quantum mechanics
The energy bandgap of GaInP solar cells can be tuned by modifying the degree of order of the alloy. In this study, we employed Sb to increase the energy bandgap of the GaInP and analyzed its impact on the performance of GaInP solar cells. An effective change in the cutoff wavelength of the external quantum efficiency of GaInP solar cells and an effective increase of 50 mV in the open‐circuit voltage of GaInP/Ga(In)As/Ge triple junction solar cells were obtained with the use of Sb. Copyright © 2016 John Wiley & Sons, Ltd.